LED technology for new smart lighting applications

A professor in the Department of Electrical, Computer, and Systems Engineering at RPI, the researchers attempted to develop a chip with components all made from GaN. The monolithically integration simplifies LED device manufacturing, requiring fewer assembly steps and less automation. Also, it is reckoned that LED devices made with monolithically integrated chips will have less parts malfunction, higher energy efficiency and cost effectiveness, and greater lighting design flexibility.The research team directly interconnects a GaN LED structure and a GaN HEMT structure to create the first monolithic integration of a HEMT and an LED on the led high bay lighting manufacturer. The device, grown on a sapphire substrate, demonstrated light output and light density comparable to standard GaN LED devices. Professor Chow regards this study as a key step toward creating a new class of optoelectronic device: the light-emitting integrated circuit.
Just as the integration of many silicon devices in a single chip has enabled powerful compact computers and a wide range of smart device technology, the LEIC will play an important role in cost-effective monolithic integration of electronics and LED technology for new smart lighting applications and more efficient LED lighting systems. LEICs will result in even higher energy efficiency of LED lighting systems. The new devices, new applications, and new breakthroughs enabled by LEICs will truly usher the smart lighting era.

Compared with the standard 1000-4000 hour life of the incumbent UV lamp technologies, vertical UV-LED systems can last for 50,000 hours under optimal thermal management conditions. In addition, the instant on/off function and a compact point-source make SemiLEDs N9 UV-LED compatible with a wide variety of optics, so it allows solution integrators to eliminate maintenance-intensive components such as mechanical shutters or focusing windows. High-output UV sources are commonly used in semiconductor and electronic photo-resistive etching or processing, as well as high-throughput printing systems, and larger scale industrial bonding or curing applications, often eliminating the need for toxic solvents.The mid-power P50N UV-LED series consists of nichia led high bay ies file a complete product series available for 0.17, 0.34 and 0.50-watt drive options, providing 140mW of output, for wavelengths from 385nm to 420nm in 5nm bins. The 5mm x 5mm package is fit for integration into compact arrays or for high-reliability backlight elements in UV-driven signage. The multiple choices of output combinations make the system integrator's task easier by allowing a common design platform for portable device applications.

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