The posting also said that because the material has a color rendering index (CRI) rating of 85 and a correlated color temperature of less than 4,000 kelvins, the material would meet two of the most important technical lighting criteria in determining which light sources are ideal for indoor lighting.
There were two problems in the development of the deep ultraviolet LED: developing a high-quality single-crystal substrate made of AlN, which is the main material, and making a deep ultraviolet LED high bay light. To solve those problems, a research team was formed by researchers of TUAT, Tokuyama, North Carolina State University and HexaTech Inc.
TUAT established a method to rapidly grow high-purity AlN crystal with its own hydride vapor phase epitaxy (HVPE) technology and obtained a basic patent for it in Japan and the US in cooperation with TUAT-TLO Co Ltd. North Carolina State University and HexaTech developed a technology to form seed crystal with a sublimation technique that enables to grow AlN with a low defect density though deep ultraviolet rays do not pass through it.
This time, the research group realized an AlN substrate that has both a high deep ultraviolet ray transmission rate and a low defect density by using AlN that was rapidly grown with the HVPE technology on AlN seed crystal made with a sublimation technique for the first time in the world. Tokuyama obtained a license to use the HVPE technology, established a volume production technique with it, formed 260nm-band (UV-C) ultraviolet LEDs optimal for use in sterilization on the substrate and confirmed the world's highest levels of output characteristics.
There were two problems in the development of the deep ultraviolet LED: developing a high-quality single-crystal substrate made of AlN, which is the main material, and making a deep ultraviolet LED high bay light. To solve those problems, a research team was formed by researchers of TUAT, Tokuyama, North Carolina State University and HexaTech Inc.
TUAT established a method to rapidly grow high-purity AlN crystal with its own hydride vapor phase epitaxy (HVPE) technology and obtained a basic patent for it in Japan and the US in cooperation with TUAT-TLO Co Ltd. North Carolina State University and HexaTech developed a technology to form seed crystal with a sublimation technique that enables to grow AlN with a low defect density though deep ultraviolet rays do not pass through it.
This time, the research group realized an AlN substrate that has both a high deep ultraviolet ray transmission rate and a low defect density by using AlN that was rapidly grown with the HVPE technology on AlN seed crystal made with a sublimation technique for the first time in the world. Tokuyama obtained a license to use the HVPE technology, established a volume production technique with it, formed 260nm-band (UV-C) ultraviolet LEDs optimal for use in sterilization on the substrate and confirmed the world's highest levels of output characteristics.
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